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rf & protection devices data sheet revision 1.2, 2013-04-03 BFP840FESD robust low noise silicon germ anium bipolar rf transistor
edition 2013-04-03 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP840FESD data sheet 3 revision 1.2, 2013-04-03 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossav e?, dave?, di-pol?, easypim?, econobridge?, econodual?, econopim?, econopack?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, origa?, powercode?; primarion?, pr imepack?, primestack?, pr o-sil?, profet?, rasic?, reversave?, satric?, si eget?, sindrion?, sipmos?, smartl ewis?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mipi? of mipi allianc e, inc. mips? of mips technologies, inc., u sa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius satellite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-11-11 BFP840FESD, robust low noise silicon germanium bipolar rf transistor revision history: 2013-04-03, revision 1.2 page subjects (major changes since last revision) this data sheet replaces the revision from 2012-07-11. p. 8 item about aec-q101 added to feature list, minor changes. p. 27 picture for marking description updated.
BFP840FESD table of contents data sheet 4 revision 1.2, 2013-04-03 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1product brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2 general ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.3 frequency dependent ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5.4 characteristic dc diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.5 characteristic ac diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 7 package information tsfp-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 table of contents
BFP840FESD list of figures data sheet 5 revision 1.2, 2013-04-03 figure 4-1 total power dissipation p tot = f ( t s ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5-1 BFP840FESD testing circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter . . . . . . . . . . . . . . . . . 16 figure 5-3 dc current gain h fe = f ( i c ), v ce = 1.8 v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 5-4 collector current vs. base emitter forward voltage i c = f ( v be ), v ce = 1.8 v . . . . . . . . . . . . . . . . 17 figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 1.8 v . . . . . . . . . . . . . . . . . . . 17 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 1.8 v . . . . . . . . . . . . . . . . . . . 18 figure 5-7 transition frequency f t = f ( i c ), f = 2 ghz, v ce = parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 5-8 3rd order intercept point at output oip3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters . . . . . . . . . 19 figure 5-9 3rd order intercept point at output oip3 [dbm]= f ( i c , v ce ), z s = z l = 50 ? , f = 5.5 ghz . . . . . . 20 figure 5-10 compression point at output op 1db [dbm]= f ( i c , v ce ), z s = z l = 50 ? , f = 5.5 ghz . . . . . . . . . . . 20 figure 5-11 collector base capacitance c cb = f ( v cb ), f = 1 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 5-12 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 1.8 v, i c = 10 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 5-13 maximum power gain g max = f ( i c ), v ce = 1.8 v, f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 22 figure 5-14 maximum power gain g max = f ( v ce ), i c = 10 ma, f = parameter in ghz . . . . . . . . . . . . . . . . . . . 22 figure 5-15 input reflection coefficient s 11 = f ( f ), v ce = 1.8 v, i c = 5 / 10 / 15 ma . . . . . . . . . . . . . . . . . . . . . 23 figure 5-16 source impedance for minimum noise figure z opt = f ( f ), v ce = 1.8 v, i c = 5 / 10 / 15 ma . . . . . . 23 figure 5-17 output reflection coefficient s 22 = f ( f ), v ce = 1.8 v, i c = 5 / 10 / 15 ma. . . . . . . . . . . . . . . . . . . . 24 figure 5-18 noise figure nf min = f ( f ), v ce = 1.8 v, i c = 5 / 10 / 15 ma, z s = z opt . . . . . . . . . . . . . . . . . . . . . . 24 figure 5-19 noise figure nf min = f ( i c ), v ce = 1.8 v, z s = z opt , f = parameter in ghz . . . . . . . . . . . . . . . . . . . 25 figure 5-20 noise figure nf 50 = f ( i c ), v ce = 1.8 v, z s = 50 ? , f = parameter in ghz . . . . . . . . . . . . . . . . . . . 25 figure 7-1 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7-2 package footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7-3 marking description (marking bfp 840fesd: t8s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 figure 7-4 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 list of figures
BFP840FESD list of tables data sheet 6 revision 1.2, 2013-04-03 table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 4-1 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5-1 dc characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-2 general ac characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-3 ac characteristics, v ce =1.8v, f = 0.45 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 5-4 ac characteristics, v ce =1.8v, f = 0.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-5 ac characteristics, v ce =1.8v, f = 1.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-6 ac characteristics, v ce =1.8v, f = 1.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-7 ac characteristics, v ce =1.8v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-8 ac characteristics, v ce =1.8v, f = 3.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-9 ac characteristics, v ce =1.8v, f = 5.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-10 ac characteristics, v ce =1.8v, f = 10 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 5-11 ac characteristics, v ce = 1.8 v, f = 12 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 list of tables
BFP840FESD product brief data sheet 7 revision 1.2, 2013-04-03 1 product brief the BFP840FESD is a high performance hbt (heterojunct ion bipolar transistor) spec ifically designed for 5-6 ghz wi-fi applications. the device is based on infi neon?s reliable high volume sige:c technology. the BFP840FESD provides inherently good input and out put power match as well as inherently good noise match at 5-6 ghz. the simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the wi-fi application. integrated protection el ements at in- and output make the device robust against esd and excessive rf input power. the device offers its high performance at low current and voltage and is especi ally well-suited for portable battery- powered applications in which energy efficiency is a key requirement. the device comes in an easy to use thin flat package with visible leads.
BFP840FESD features data sheet 8 revision 1.2, 2013-04-03 2 features applications as low noise amplifier (lna) in ? mobile and fixed connectivity applic ations: wlan 802.11, wimax and uwb ? satellite communication systems: satellite radio (sda rs, dab), navigation syste ms (e.g. gps, glonass) and c-band lnb (1st and 2nd stage lna) ? ku-band lnb front-end (2nd stage or 3rd stage lna and active mixer) ? ka-band oscillators (dros) attention: esd (electrostatic discharge) sensitive device, observe handling precautions ? robust ultra low noise amplifie r based on infineons reliable high volume sige:c technology ? unique combination of high end rf performance and robustness: 20 dbm maximum rf input power, 1.5 kv hbm esd hardness ? very high transition frequency f t = 85 ghz enables best in class noise performance at high frequencies: nf min = 0.75 db at 5.5 ghz, 1.8 v, 5 ma ? high gain | s 21 | 2 = 19 db @ 5.5 ghz, 1.8 v, 10 ma ? oip3 = 22.5 dbm at 5.5 ghz, 1.5 v, 6 ma ? ideal for low voltage applications e.g. v cc = 1.2 v and 1.8 v (2.85 v, 3.3 v, 3.6 v requires corresponding collector resistor) ? low power consumption, ideal for mobile applications ? pb free (rohs compliant) and halogen free thin flat package with visible leads ? qualification report according to aec-q101 available tsfp-4-1 product name package pin configuration marking BFP840FESD tsfp-4-1 1 = b 2 = e 3 = c 4 = e t8s
BFP840FESD maximum ratings data sheet 9 revision 1.2, 2013-04-03 3 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) parameter symbol values unit note / test condition min. max. collector emitter voltage v ceo ?2.25 2.0 v t a = 25 c t a = -55 c open base collector emitter voltage 1) 1) v ces is identical to v ceo due to design. v ces ?2.25 2.0 v t a = 25 c t a = -55 c e-b short circuited collector base voltage 2) 2) v cbo is similar to v ceo due to design. v cbo ?2.9 2.6 v t a = 25 c t a = -55 c open emitter base current i b -5 3 ma ? collector current i c ?35ma? rf input power p rfin ?20dbm? esd stress pulse v esd -1.5 1.5 kv hbm, all pins, acc. to jesd22-a114 total power dissipation 3) 3) t s is the soldering point temperature . t s is measured on the emitter lead at the soldering point of the pcb. p tot ?75mw t s 109 c junction temperature t j ?150c? storage temperature t stg -55 150 c ?
BFP840FESD thermal characteristics data sheet 10 revision 1.2, 2013-04-03 4 thermal characteristics figure 4-1 total power dissipation p tot = f ( t s ) table 4-1 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1) for the definition of r thjs please refer to application note an077 (thermal resistance calculation). r thjs ?541?k/w? 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 t s [c] ptot [mw]
BFP840FESD electrical characteristics data sheet 11 revision 1.2, 2013-04-03 5 electrical characteristics 5.1 dc characteristics 5.2 general ac characteristics table 5-1 dc characteristics at t a = 25 c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 2.25 2.6 v i c = 1 ma, i b = 0 open base collector emitter leakage current i ces ??400na v ce = 1.5 v, v be = 0 e-b short circuited collector base leakage current i cbo ??400na v cb = 1.5 v, i e = 0 open emitter emitter base leakage current i ebo ??10 a v eb = 0.5 v, i c = 0 open collector dc current gain h fe 150 260 450 v ce = 1.8 v, i c = 10 ma pulse measured table 5-2 general ac characteristics at t a = 25 c parameter symbol values unit note / test condition min. typ. max. transition frequency f t ?85?ghz v ce = 1.8 v, i c = 25 ma f = 2 ghz collector base capacitance c cb ?38?ff v cb = 1.8 v, v be = 0 f = 1 mhz emitter grounded collector emitte r capacitance c ce ?0.37?pf v ce = 1.8 v, v be = 0 f = 1 mhz base grounded emitter base capacitance c eb ?0.37?pf v eb = 0.4 v, v cb = 0 f = 1 mhz collector grounded
BFP840FESD electrical characteristics data sheet 12 revision 1.2, 2013-04-03 5.3 frequency dependent ac characteristics measurement setup is a test fixture with bias t?s in a 50 ? system, t a = 25 c figure 5-1 BFP840FESD testing circuit table 5-3 ac characteristics, v ce =1.8v, f =0.45ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 35 28 ? ? db i c =10ma i c =10ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.55 27 ? ? db i c =5ma i c =5ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 4 19.5 ? ? dbm z s = z l =50 ? i c =10ma i c =10ma out in bias -t bias-t b (pin 1) e c e vc top view vb
BFP840FESD electrical characteristics data sheet 13 revision 1.2, 2013-04-03 table 5-4 ac characteristics, v ce =1.8v, f = 0.9 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 31 27 ? ? db i c =10ma i c =10ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.6 26.5 ? ? db i c =5ma i c =5ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 4 19.5 ? ? dbm z s = z l =50 ? i c =10ma i c =10ma table 5-5 ac characteristics, v ce =1.8v, f = 1.5 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 28.5 26 ? ? db i c =10ma i c =10ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.6 25 ? ? db i c =5ma i c =5ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 4 20 ? ? dbm z s = z l =50 ? i c =10ma i c =10ma table 5-6 ac characteristics, v ce =1.8v, f = 1.9 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 27.5 25.5 ? ? db i c =10ma i c =10ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.65 24 ? ? db i c =5ma i c =5ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 4.5 21 ? ? dbm z s = z l =50 ? i c =10ma i c =10ma
BFP840FESD electrical characteristics data sheet 14 revision 1.2, 2013-04-03 table 5-7 ac characteristics, v ce =1.8v, f = 2.4 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 26.5 24 ? ? db i c =10ma i c =10ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.65 22.5 ? ? db i c =5ma i c =5ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 4 21 ? ? dbm z s = z l =50 ? i c =10ma i c =10ma table 5-8 ac characteristics, v ce =1.8v, f = 3.5 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 25 22 ? ? db i c =10ma i c =10ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.7 20.5 ? ? db i c =5ma i c =5ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 5 22.5 ? ? dbm z s = z l =50 ? i c =10ma i c =10ma table 5-9 ac characteristics, v ce =1.8v, f = 5.5 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 23 19 ? ? db i c =10ma i c =10ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.75 17.5 ? ? db i c =5ma i c =5ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 5 22 ? ? dbm z s = z l =50 ? i c =10ma i c =10ma
BFP840FESD electrical characteristics data sheet 15 revision 1.2, 2013-04-03 note: oip3 value depends on termination of all intermodulatio n frequency components. termination used for this measurement is 50 ? from 0.2 mhz to 12 ghz. table 5-10 ac characteristics, v ce =1.8v, f = 10 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ma | s 21 | 2 ? ? 16 13 ? ? db i c =10ma i c =10ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 1.1 13 ? ? db i c =5ma i c =5ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 3 19.5 ? ? dbm z s = z l =50 ? i c =10ma i c =10ma table 5-11 ac characteristics, v ce = 1.8 v, f =12ghz parameter symbol values unit note / test condition min. typ. max. power gain db maximum power gain g ma ?15.5? i c =10ma transducer gain | s 21 | 2 ?10.5? i c =10ma minimum noise figure db minimum noise figure nf min ?1.3? i c =5ma associated gain g ass ?10.5? i c =5ma linearity dbm z s = z l =50 ? 1 db compression point at output op 1db ?1.5? i c =10ma 3rd order intercept point at output oip3 ?18.5? i c =10ma
BFP840FESD electrical characteristics data sheet 16 revision 1.2, 2013-04-03 5.4 characteristic dc diagrams figure 5-2 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter figure 5-3 dc current gain h fe = f ( i c ), v ce = 1.8 v 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 14 16 18 v ce [v] i c [ma] i b = 10a i b = 20a i b = 30a i b = 40a i b = 50a i b = 60a i b = 70a 10 ?2 10 ?1 10 0 10 1 10 2 10 2 10 3 i c [ma] h fe
BFP840FESD electrical characteristics data sheet 17 revision 1.2, 2013-04-03 figure 5-4 collector current vs. base emitter forward voltage i c = f ( v be ), v ce = 1.8 v figure 5-5 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 1.8 v 0.5 0.6 0.7 0.8 0.9 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 v be [v] i c [ma] 0.5 0.6 0.7 0.8 0.9 10 ?7 10 ?6 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 v be [v] i b [ma]
BFP840FESD electrical characteristics data sheet 18 revision 1.2, 2013-04-03 figure 5-6 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 1.8 v 0.3 0.4 0.5 0.6 0.7 10 ?11 10 ?10 10 ?9 10 ?8 10 ?7 10 ?6 v eb [v] i b [a]
BFP840FESD electrical characteristics data sheet 19 revision 1.2, 2013-04-03 5.5 characteristic ac diagrams figure 5-7 transition frequency f t = f ( i c ), f = 2 ghz, v ce = parameter figure 5-8 3rd order intercept point at output oip3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters 0 5 10 15 20 25 30 35 40 45 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 i c [ma] f t [ghz] 2.00v 1.80v 1.50v 1.00v 0.50v 0 5 10 15 20 25 30 0 5 10 15 20 25 i c [ma] oip3 [dbm] 1.5v, 2400mhz 1.8v, 2400mhz 1.5v, 5500mhz 1.8v, 5500mhz
BFP840FESD electrical characteristics data sheet 20 revision 1.2, 2013-04-03 figure 5-9 3rd order intercept point at output oip3 [dbm]= f ( i c , v ce ), z s = z l = 50 ? , f = 5.5 ghz figure 5-10 compression point at output op 1db [dbm]= f ( i c , v ce ), z s = z l = 50 ? , f = 5.5 ghz 4 5 6 7 8 9 9 10 10 11 11 12 12 13 13 14 14 15 15 15 16 16 16 17 17 17 18 18 18 1 8 19 19 19 19 19 19 19 20 20 20 20 20 20 20 21 21 21 21 21 21 22 22 22 22 v ce [v] i c [ma] 1 1.2 1.4 1.6 1.8 2 5 10 15 20 25 ?6 ?5 ?4 ?3 ?2 ?2 ?2 ?1 ?1 ?1 ?1 0 0 0 0 0 1 1 1 1 1 2 2 2 2 2 2 3 3 3 3 3 4 4 4 4 4 5 5 5 5 5 6 6 6 6 7 7 v ce [v] i c [ma] 1 1.2 1.4 1.6 1.8 2 5 10 15 20 25
BFP840FESD electrical characteristics data sheet 21 revision 1.2, 2013-04-03 figure 5-11 collector base capacitance c cb = f ( v cb ), f = 1 mhz figure 5-12 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 1.8 v, i c = 10 ma 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0.03 0.035 0.04 0.045 0.05 v cb [v] c cb [pf] 0 1 2 3 4 5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 35 40 f [ghz] g [db] g ms g ma |s 21 | 2
BFP840FESD electrical characteristics data sheet 22 revision 1.2, 2013-04-03 figure 5-13 maximum power gain g max = f ( i c ), v ce = 1.8 v, f = parameter in ghz figure 5-14 maximum power gain g max = f ( v ce ), i c = 10 ma, f = parameter in ghz 0 5 10 15 20 25 30 35 40 45 10 15 20 25 30 35 40 i c [ma] g max [db] 12.0ghz 10.0ghz 5.5ghz 3.5ghz 2.4ghz 1.9ghz 1.5ghz 0.9ghz 0.45ghz 0 0.5 1 1.5 2 2.5 9 12 15 18 21 24 27 30 33 36 39 v ce [v] g max [db] 1.9ghz 12ghz 2.4ghz 10ghz 5.5ghz 3.5ghz 1.5ghz 0.9ghz 0.45ghz
BFP840FESD electrical characteristics data sheet 23 revision 1.2, 2013-04-03 figure 5-15 input reflection coefficient s 11 = f ( f ), v ce = 1.8 v, i c = 5 / 10 / 15 ma figure 5-16 source impedance for minimum noise figure z opt = f ( f ), v ce = 1.8 v, i c = 5 / 10 / 15 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.03 to 12 ghz 8.0 9.0 10.0 11.0 1.0 2.0 0.03 3.0 3.0 4.0 4.0 5.0 6.0 7.0 12.0 1.0 2.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.03 5.0ma 10ma 15ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.5 0.9 1.5 1.9 2.4 3.5 5.5 8.0 10.0 12.0 5.5 0.5 1.5 2.4 3.5 5.5 8.0 10.0 12.0 5ma 10ma 15ma
BFP840FESD electrical characteristics data sheet 24 revision 1.2, 2013-04-03 figure 5-17 output reflection coefficient s 22 = f ( f ), v ce = 1.8 v, i c = 5 / 10 / 15 ma figure 5-18 noise figure nf min = f ( f ), v ce = 1.8 v, i c = 5 / 10 / 15 ma, z s = z opt 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 1.0 0.03 to 12 ghz 2.0 3.0 4.0 7.0 8.0 12.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 12.0 0.03 5.0 6.0 9.0 10.0 11.0 9.0 10.0 11.0 5.0ma 10ma 15ma 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 f [ghz] nf min [db] i c = 5ma i c = 10ma i c = 15ma
BFP840FESD electrical characteristics data sheet 25 revision 1.2, 2013-04-03 figure 5-19 noise figure nf min = f ( i c ), v ce = 1.8 v, z s = z opt , f = parameter in ghz figure 5-20 noise figure nf 50 = f ( i c ), v ce = 1.8 v, z s = 50 ? , f = parameter in ghz note: the curves shown in this chapter have been generate d using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. t a =25c. 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 i c [ma] nf min [db] f = 0.9ghz f = 2.4ghz f = 3.5ghz f = 5.5ghz f = 10ghz f = 12ghz 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 i c [ma] nf 50 [db] f = 0.9ghz f = 2.4ghz f = 3.5ghz f = 5.5ghz f = 10ghz f = 12ghz
BFP840FESD simulation data data sheet 26 revision 1.2, 2013-04-03 6 simulation data for the spice gummel poon (gp) model as well as fo r the s-parameters (including noise parameters) please refer to our internet website. please consult our website and download the latest versions before actually starting your design. you find the BFP840FESD spice gp model in the intern et in mwo- and ads-format, which you can import into these circuit simulation tools very qu ickly and conveniently. the model alre ady contains the package parasitics and is ready to use for dc and high frequency simulations. the terminals of the model circuit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 12 ghz using typical devices. the BFP840FESD spice gp model reflects the typical dc- and rf-performan ce within the limitations wh ich are given by the spice gp model itself. besides the dc charac teristics all s-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
BFP840FESD package information tsfp-4-1 data sheet 27 revision 1.2, 2013-04-03 7 package information tsfp-4-1 figure 7-1 package outline figure 7-2 package footprint figure 7-3 marking description (marking BFP840FESD: t8s) figure 7-4 tape dimensions 10 max. 0.05 0.2 0.05 1.4 12 0.05 0.8 1.2 0.05 0.04 0.55 0.05 0.2 0.05 0.15 0.05 0.2 0.5 0.05 0.5 0.05 43 tsfp-4-1, -2-po v04 0.35 0.45 0.9 0.5 0.5 tsfp-4-1, -2-fp v04 tsfp-4-1, -2-tp v05 4 0.2 1.4 8 pin 1 1.55 0.7
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